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Preliminary Technical Information
High Voltage IGBT
IXGN100N170
VCES = 1700V IC90 = 95A VCE(sat) 3.0V
E
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 1 Clamped inductive load @ 0.8 * VCES VGE = 15V, VCE = 1250V, TJ = 125C RG = 10, non repetitive TC = 25C
Maximum Ratings 1700 1700 20 30 160 95 600 ICM = 200 10 V V V V A A A A s
SOT-227B, miniBLOC E153432
E G
E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter
735 -55 ... +150 150 -55 ... +150
W C C C V~ V~ Nm/lb.in. Nm/lb.in. g
Features Optimized for low conduction and switching losses Square RBSOA Isolation voltage 3000 V~ High current handling capability International standard package Advantages High power density Low gate drive requirement Applications
50/60Hz IISOL 1mA
t = 1min t = 1s
2500 3000 1.5/13 1.3/11.5 30
Mounting torque Terminal connection torque (M4)
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3mA, VGE = 0V = 8mA, VCE = VGE TJ = 125C
Characteristic Values Min. Typ. Max. 1700 3.0 5.0 V V
VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1 2.5
50 A 5 mA 200 nA 3.0 V
Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines
(c) 2008 IXYS CORPORATION, All rights reserved
DS100091(12/08)
IXGN100N170
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri td(off) tfi td(on) tri td(off) tfi RthJC RthCK 0.05 Resistive load, TJ = 25C IC = 100A, VGE = 15V VCE = 0.5 * VCES, RG = 1 Resistive load, TJ = 125C IC = 100A, VGE = 15V VCE = 0.5 * VCES, RG = 1 IC = 100A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0 V, f = 1MHz IC = 60A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 36 64 9220 455 150 425 65 186 35 192 285 395 35 250 285 435 S pF pF pF nC nC nC ns ns ns ns ns ns ns ns 0.17 C/W C/W SOT-227B miniBLOC (IXGN)
Note: 1. Pulse test, t 300s; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGN100N170
Fig. 1. Output Characteristics @ 25C
200 180 160 140 VGE = 15V 13V 11V 9V 350 300 250 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 7V
200 150 100 50
9V
7V
5V 0 0 1 2 3 4
5V 5 6 7 8 9 10
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
200 180 160 140 VGE = 15V 13V 11V 2.0
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.8 I
C
=200A
VCE(sat) - Normalized
9V
1.6 1.4 1.2 1.0 0.8 0.6 I
C
IC - Amperes
120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5V 7V
= 100A
I
C
= 50A
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
6.5 6.0 5.5 TJ = 25C 180 160 140
Fig. 6. Input Admittance
VCE - Volts
4.5 4.0 3.5 3.0 2.5 2.0 1.5 5 6 7 8 9 50A 100A
I
C
= 200A
IC - Amperes
5.0
120 100 80 60 40 20 0 TJ = - 40C 25C 125C
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGN100N170
Fig. 7. Transconductance
110 100 90 80 25C 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450 TJ = - 40C 14 16 VCE = 850V I C = 100A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
60 50 40 30 20 10 0
IC - Amperes
VGE - Volts
70
125C
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
700 600 100,000
Fig. 10. Capacitance
f = 1 MHz
Capacitance - PicoFarads
500
Cies 10,000
IC - Amperes
400 300 200 100 0 200
1,000
Coes
TJ = 125C RG = 1 dV / dt < 10V / ns
Cres 100 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 35 40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
Z(th)JC - C / W
0.100
0.010
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_100N170(9P)12-10-08
IXGN100N170
Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature
320 RG = 1 280 240 200 160 120 80 40 25 35 45 55 65 75 85 95 105 115 125 I
C
Fig. 13. Resistive Turn-on Rise Time vs. Collector Current
320
VGE = 15V VCE = 850V
280 240 200 160
RG = 1 VGE = 15V VCE = 850V TJ = 125C
t r - Nanoseconds
C
t r - Nanoseconds
I
= 100A
TJ = 25C 120 80 40 50 55 60 65 70 75 80 85 90 95 100
= 50A
TJ - Degrees Centigrade
IC - Amperes
Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance
450 400 350 65 1000 900 800
Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature
400
tr
VCE = 850V
td(on) - - - -
TJ = 125C, VGE = 15V
60 55 50
tf
VCE = 850V
td(off) - - - -
RG = 1, VGE = 15V
380 360 I C = 50A 340 320 300 280 I C = 100A 260 240 125
t d(on) - Nanoseconds
t d(off) - Nanoseconds
t r - Nanoseconds
300 250 200 150 100 50 1 2 3 4 5 6 7 8 9 10 I C = 100A I C = 50A
t f - Nanoseconds
700 600 500 400 300 200 25 35 45 55 65 75 85
45 40 35 30 25
95
105
115
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off Switching Times vs. Collector Current
1000 900 800 420 1100 1000 900
Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance
900
tf
VCE = 850V
td(off) - - - -
RG = 1, VGE = 15V
400 380 360
tf
VCE = 850V
td(off) - - - -
TJ = 125C, VGE = 15V
800 700 600
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
700 600 500 400 300 200 50 55 60 65 70 75 80 85 90 95 TJ = 25C TJ = 125C
800 700 600 500 400 300 1 2 3 4 5 6 7 8 9 10 I
C
340 320 300 280 260 100
I C = 50A
500 400 = 100A 300 200 100
IC - Amperes
RG - Ohms
(c) 2008 IXYS CORPORATION, All rights reserved
IXYS REF: G_100N170(9P)12-10-08

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